International Journals


[IJ01]   A. Abramo, F. Venturi, E. Sangiorgi, C. Fiegna, B. Riccò, R. Brunetti, W. Quade, C. Jacoboni,
                “A multi-band model for hole transport in silicon at high energies”,
                Semiconductor Science and Technology, 7, B597 (1992).

[IJ02]   A. Abramo, F. Venturi, E. Sangiorgi, J.M. Higman, B. Riccò,
                “A numerical method to compute isotropic band models from anisotropic semiconductor band
                structures”,
                IEEE Transaction on Computer-Aided Design, 12, 1327 (1993).

[IJ03]   A. Abramo, L. Baudry, R. Brunetti, R. Castagné, M. Charef, F. Dessenne, P. Dolfus, R. Dutton,
                W.L. Engl, R. Fauquembergue, C. Fiegna, M.V. Fischetti, S. Galdin, N. Goldsman, M. Hackel,
                C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J.M. Higman, T. Iizuka, C. Jungemann,
                Y. Kamakura, H. Kosina, T. Kunikiyo, S. Laux, H. Lin, C. Maziar, H. Mizuno, H.J. Peifer,
                S. Ramaswamy, N. Sano, P.G. Scrobohaci, S. Selberherr, M. Takenaka, T-W. Tang,
                K. Taniguchi, J.L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S-L. Wang,
                X. Wang, C-S. Yao, P.D. Yoder, A. Yoshii,
                “A comparison of numerical solutions of the Boltzmann Transport Equation for high energy
                electron transport silicon”,
                IEEE Transaction on Electron Devices, 41, 1646 (1994).

[IJ04]   A. Abramo, R. Brunetti, C. Jacoboni, F. Venturi, E. Sangiorgi,
                “A multi-Band Monte Carlo approach to Coulomb interaction for device analysis”,
                Journal of Applied Physics, 76, 5786 (1994).

[IJ05]   A. Abramo, J. Bude, F. Venturi, M.R. Pinto,
                “Mobility simulation of a novel Si/SiGe FET structure”,
                IEEE Electron Device Letters, 17, 59 (1996).

[IJ06]   A. Abramo, P. Casarini, C. Jacoboni,
                “Phase time for coherent transport in two-dimensional structures”,
                Applied Physics Letters, 69, 629 (1996).

[IJ07]   A. Abramo, C. Fiegna,
                “Electron energy distributions in silicon structures at low applied voltages and high electric fields”,
                Journal of Applied Physics, 80, 889 (1996).

[IJ08]   P. Bordone, A. Abramo, R. Brunetti, M. Pascoli, C. Jacoboni,
                “Wigner-function for open systems with electron-phonon interaction”,
                Physica Status Solidi B, 204, 303 (1997).

[IJ09]   I. Ferretti, A. Abramo, R. Brunetti, C. Jacoboni,
                “Full-band Monte Carlo analysis of hot-carrier light emission in GaAs”,
                Physica Status Solidi B, 204, 538 (1997).

[IJ10]   C. Fiegna, A. Abramo,
                “Analysis of quantum effects in non-uniformly doped MOS structure”,
                IEEE Transaction Electron Devices, 45, 877 (1998).

[IJ11]   C. Jacoboni, A. Abramo, P. Bordone, R. Brunetti, M. Pascoli,
                “Application of the Wigner-function formulation to mesoscopic systems in presence of the
                electron-phonon interaction”,
                VLSI Design, 8, 185 (1998).

[IJ12]   P. Bordone, M. Pascoli, R. Brunetti, A. Bertoni, C. Jacoboni, A. Abramo,
                “Quantum transport of electrons in open nanostructures with the Wigner-function formalism”,
                Physical Review B, 59, 3060 (1999).

[IJ13]   M.G. Betti, V. Corradini, V. De Renzi, C. Mariani, P. Casarini, A. Abramo,
                “Density of states of a two-dimensional electron gas measured by high resolution photoelectron
                spectroscopy”,
                Solid State Communications, 110, 661 (1999).

[IJ14]   A. Abramo, A. Cardin, L. Selmi, E. Sangiorgi,
                “Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs”,
                IEEE Transaction Electron Devices, 47, 1858 (2000).


[IJ15]   J.-S. Goo, C.-H. Choi, A. Abramo, J.-G. Ahn, Z. Yu, T. H. Lee, R. W. Dutton,
                “Physical origin of the excess thermal noise in short channel MOSFETs",
                IEEE Electron Device Letters, 22, 101 (2001).

[IJ16]   A. Dalla Serra, A. Abramo, P. Palestri, L. Selmi, F. Widdershoven,
                “Closed- and open-boundary models for gate-current calculation in MOS devices”,
                IEEE Transaction Electron Devices, 48, 1811 (2001).

[IJ17]   M.G. Betti, V. Corradini, G. Bertoni, P. Casarini, C. Mariani, A. Abramo,
                “Density of states of a two-dimensional electron gas at semiconductor surfaces”,
                Physical Review B, 63, 155315, (2001).

[IJ18]   S. Zanchetta, A. Todon, A. Abramo, L. Selmi and E. Sangiorgi,
                “Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects
                in scaled MOSFETs”,
                Solid State Electronics, 46, 429 (2002).

[IJ19]   P. Palestri, A. Dalla Serra, L. Selmi, M. Pavesi , P. Rigolli, A. Abramo, F. Widdershoven,
                E. Sangiorgi,
                “A comparative analysis of substrate current generation mechanisms in tunneling MOS
                capacitors”,
                IEEE Transaction Electron Devices, 49, 1427 (2002).

[IJ20]   E. Sangiorgi, P. Palestri, D. Esseni, C. Fiegna, A. Abramo, L. Selmi,
                “Device simulation for decananometer MOSFETs”,
                Material Science in Semiconductor Processing, 6, 93 (2003).

[IJ21]   A. Abramo,
                “Modeling electron transport in MOSFET devices: evolution and state of the art”,
                International Journal of High Speed Electronics and Systems, 13, 701 (2003). (Invited paper)

[IJ22]   D. Esseni, A. Abramo,
                “Modeling of electron mobility degradation by remote Coulomb scattering in ultra-thin oxide
                MOSFETs”,
                IEEE Transaction Electron Devices, 50, 1665 (2003).

[IJ23]   D. Esseni, A. Abramo, L. Selmi, E. Sangiorgi,
                “Physically based modeling of low field electron transport in ultra-thin single- and double-gate SOI
                n-MOSFETs”,
                IEEE Transaction Electron Devices, 50, 2445 (2003).

[IJ24]   D. Esseni, A. Abramo,
                “Mobility modelling of SOI MOSFETs”,
                Semiconductor Science and Technology, 19, S67 (2004).

[IJ25]   M. Martincigh, A. Abramo,
                “A new architecture for digital stochastic pulse-mode neurons based on the voting circuit”,
                IEEE Transaction on Neural Networks, 16, 1685 (2005).

[IJ26]   A. Abramo, F. Blanchini, L. Geretti, C. Savorgnan,
                “A mixed convex/non-convex distributed localization approach for the deployment of indoor
                positioning services”,
                IEEE Transaction on Mobile Computing, 7, 1325 (2008).


[IJ27]   L. Geretti, A. Abramo,
                “The correspondence between deterministic and stochastic digital neurons: analysis and
                methodology”,
                IEEE Transaction on Neural Networks, 19, 1739 (2008).


[IJ28]   P. Merlino, A. Abramo,
                “A fully pipelined architecture for the LOCO-I compression algorithm”,
                IEEE Transaction on VLSI Systems, 17, 967 (2009).


[IJ29]   P. Merlino, A. Abramo,
                “An integrated sensing/communication architecture for structural health-monitoring”,
                IEEE Sensors Journal, 9, 1397 (2009).


[IJ30]   L. Geretti, A. Abramo,
                “Distributed multi-level hierarchic strategy for broadcast collaborative mobile networks”,
                IEEE Transaction on Mobile Computing, 9, 1255 (2010).


[IJ31]   C. Cavallotti, P. Merlino, M. Vatteroni, P. Valdastri, A. Abramo, A. Menciassi, P. Dario,

                 “An FPGA-based versatile development system for endoscopic capsule design optimization”,

                Sensors and Actuators A - Physical, 301 (2011).




International Conferences


[IC01]   F. Venturi, C. Fiegna, A. Abramo, E. Sangiorgi, B. Riccò,

                 “Hot-holes generation and transport in n-MOSFETS: a Monte Carlo investigation”,

                 IEDM Technical Digest, 455, S. Francisco, CA (USA), Dec. 1990.


[IC02]   C. Fiegna, E. Sangiorgi, F. Venturi, A. Abramo, B. Riccò,

                 “Optimization of physical parameters for high energy transport simulation in Si based on efficient

                 electron energy distribution calculation”,

                 VPAD Technical Digest, 40, Oiso Kanagawa, (Japan), Mar. 1991.


[IC03]   A. Abramo, C. Fiegna, F. Venturi, R. Brunetti, E. Sangiorgi, C. Bergonzoni, B. Riccò,

                 “A new microscopic model for hole transport in silicon with application to sub-micron LDD

                 MOSFETs”,

                 SISDEP Technical Digest, 257, Zurich, (Switzerland), Sep. 1991.


[IC04]   B. Riccò, E. Sangiorgi, F. Venturi, C. Fiegna, A. Abramo,

                 “Monte Carlo simulator for semiconductor devices”,

                 VI SB Micro Technical Digest, 18, Belo Horizonte (Brazil), Aug. 1991. (Invited paper)


[IC05]   F. Venturi, A. Abramo, E. Sangiorgi, J. Higman, C. Fiegna, B. Riccò,

                 “An isotropic best-fitting band model for electrons and hole transport in Silicon”,

                 IEDM Technical Digest, 503, Washington, DC (USA), Dec. 1991.


[IC06]   C. Fiegna, E. Sangiorgi, F. Venturi, A. Abramo, B. Riccò,

                 “Modeling of high energy electrons in n-MOSFETs”,

                 IEDM Technical Digest, 119, Washington, DC (USA), Dec. 1991.


[IC07]   F. Venturi, E. Sangiorgi, C. Fiegna, A. Abramo, F. Capasso,

                 “Non-local effects on the electron energy distribution in short devices under high-field conditions”,

                 IWCE Technical Digest, 221, Urbana-Champaign, IL (USA), May 1992.


[IC08]   A. Abramo, F. Venturi, E. Sangiorgi, J.M. Higman, C. Fiegna, B. Riccò,

                 “A numerical method to compute isotropic band models from anisotropic semiconductor band

                 structures”,

                 NUPAD IV Technical Digest, 85, Seattle, WH (USA), May 1992.


[IC09]   A. Abramo, F. Venturi, E. Sangiorgi, C. Fiegna, B. Riccò,

                 “Device simulation of small silicon MOSFET's using the Monte Carlo method”,

                 Workshop on Parallel Algorithms Technical Digest, 85, Sofia, Aug. 1992. (Invited paper)


[IC10]   P. Vitanov, M. Nedjalkov, C. Jacoboni, F. Rossi, A. Abramo,

                 “Unified Monte Carlo approach to the Boltzmann and Wigner equations”,

                 Workshop on Parallel Algorithms Technical Digest, 117, Sofia, Aug. 1992. (Invited paper)


[IC11]   E. Sangiorgi, C. Fiegna, A. Abramo,

                 “Modeling of high energy transport in silicon by means of the Monte Carlo method”,

                 SMS Technical Digest, 17, Taipei, Taiwan, Mar. 1993. (Invited paper)


[IC12]   C.-S. Yao, D. Chen, R.W. Dutton, F. Venturi, E. Sangiorgi, A. Abramo,

                 “An efficient impact ionization model for silicon Monte Carlo simulation”,

                VPAD Technical Digest, 42, Nara, Japan, May 1993.


[IC13]   A. Abramo, R. Brunetti, C. Jacoboni, F. Venturi,

                 “Monte Carlo simulation of carrier-carrier interaction in silicon devices”,

                 SISDEP Technical Digest, 181, Wien, (Austria), Sep. 1993.


[IC14]   A. Ghetti, L. Selmi, E. Sangiorgi, A. Abramo, F. Venturi,

                 “A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of

                 MOS structures”,

                IEDM Technical Digest, 363, S. Francisco, CA (USA), Dec. 1994.


[IC15]   A. Abramo, J. Bude, F. Venturi, M.R. Pinto,

                 “Mobility simulation in Si/SiGe heterostructure FETs”,

                 IEDM Technical Digest, 731, S. Francisco, CA (USA), Dec. 1994.


[IC16]   A. Abramo, J. Bude, F. Venturi, M.R. Pinto, E. Sangiorgi,

                 “Performance optimization in Si/SiGe heterostructure FETs”,

                 SISPAD Technical Digest, 106, Erlangen, (Germany), Sep. 1995.


[IC17]   A. Abramo, C. Fiegna, F. Venturi,

                 “Hot carrier effects in short MOSFETs at low applied voltages”,

                 IEDM Technical Digest, 301, Washington, DC (USA), Dec. 1995.


[IC18]   A. Abramo, P. Casarini, C. Jacoboni,

                 “Transmission properties of resonant cavities and rough quantum wells”,

                 HCIS Technical Digest, 509, Chicago, IL (USA), Aug. 1996.


[IC19]   C. Fiegna, A. Abramo,

                 “Optimization of channel profiles for ultra-short MOSFETs by quantum simulation”,

                 IEDM Technical Digest, 815, S. Francisco, CA (USA), Dec. 1996.


[IC20]   A. Abramo,

                 “A general purpose 2D Schrödinger solver with open/closed boundary conditions for quantum

                 device analysis”,

                SISPAD Technical Digest, 105, Boston, MA (USA), Sep. 1997.


[IC21]   C. Fiegna, A. Abramo,

             “Solution of 1-D Schrödinger and Poisson equations in single and double gate SOI MOS”,

             SISPAD Technical Digest, 93, Boston, MA (USA), Sep. 1997.


[IC22]   A. Abramo, C. Fiegna, P. Casarini,

                 “Quantum effects in the simulation of conventional devices”,

                 SISPAD Technical Digest, 121, Leuven, (Belgium), Sep. 1998. (Invited paper)


[IC23]   C. Fiegna, A. Abramo, E. Sangiorgi,

                 “Simulation study of the impact of channel doping profiles on MOSFET analog performance”,

                 ESSDERC Technical Digest, 688, Leuven, (Belgium), Sep. 1999.


[IC24]   A. Abramo, A. Cardin, L. Selmi, E. Sangiorgi,

                 “Two-dimensional quantum simulation of silicon MOSFETs”,

                 ISDRS Technical Digest, 77, Charlottesville, VA (USA), Dec. 1999.


[IC25]   A. Todon, L. Selmi, A. Abramo, E. Sangiorgi,

                 “On the optimization of HALOs for 0.1 mm MOSFETs and below”,

                 ISDRS Technical Digest, 41, Charlottesville, VA (USA), Dec. 1999.


[IC26]   A. Abramo, A. Cardin, L. Selmi, E. Sangiorgi,

                 “Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon

                 MOSFETs”,

                 ULIS 2000 Technical Digest, 107, Grenoble, (FR), Jan 2000.


[IC27]   A. Todon, L. Selmi, A. Abramo, E. Sangiorgi,

                 “Short channel and hot carrier performance of ULSI MOSFETs with halo structures”,

                 ULIS 2000 Technical Digest, 111, Grenoble, (FR), Jan. 2000.


[IC28]   A. Abramo, L. Selmi, Z. Yu, R. W. Dutton,

                 “Well-Tempered MOSFETs: 1D versus 2D quantum analysis”,

                 SISPAD Technical Digest, 188, Seattle, WA (USA), Sep. 2000.


[IC29]   A. Dalla Serra, A. Abramo, P. Palestri, L. Selmi,

                 “A comparison between semi-classical and quantum-mechanical escape-times for gate current

                 calculations”,

                 ESSDERC Technical Digest, 340, Cork, (IR), Sep. 2000.


[IC30]   P. Palestri, M. Pavesi, P. Rigolli, L. Selmi, A. Dalla Serra, A. Abramo, F. Widdershoven,

                 E. Sangiorgi,

                 “Impact ionization and photon emission in MOS capacitors and FETs”,

                 IEDM Technical Digest, 97, S. Francisco, CA (USA), Dec. 2000.


[IC31]   C. Fiegna, A. Abramo, 

                 “Simulation of tunneling gate currents in ultra-thin SOI MOSFETs”,

                 ISDRS Technical Digest, 110, Washington DC (USA), Dec. 2001.


[IC32]   D. Esseni, A. Abramo,

                 “An improved model for electron mobility degradation by remote Coulomb scattering in ultra-thin

                 oxide MOSFETs”,

                 ESSDERC Technical Digest, 183, Florence, (IT), Sep. 2002.


[IC33]   R.Clerc, P. Palestri, A. Abramo,

                 “Investigation on convergence and stability of self-consistent Monte Carlo device simulations”,

                 ESSDERC Technical Digest, 191, Florence, (IT), Sep. 2002.


[IC34]   D. Esseni, A. Abramo, L. Selmi, E. Sangiorgi,

                 “Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs”,

                 IEDM Technical Digest, 719, S. Francisco, CA (USA), Dec. 2002.


[IC35]   P. Palestri, D. Esseni, A. Abramo, R. Clerc, L. Selmi,

                 “Carrier quantization in SOI MOSFETs using an effective potential based Monte Carlo tool”,

                 ESSDERC Technical Digest, 407, Lisbona, Sept. 2003.


[IC36]   L. Lucci, D. Esseni, J. Loo, Y. Ponomarev, L. Selmi, A. Abramo, E. Sangiorgi,

                 “Quantitative assessment of mobility degradation by remote Coulomb scattering in ultra-thin oxide 

                 MOSFETs: measurements and simulations”,

                 IEDM Technical Digest, 463, Washington, DC (USA), Dec. 2003.


[IC37]   M. Martincigh, A. Abramo,

                 “A new stochastic neuron architecture for efficient FPGA implementation”,

                 Austrochip Technical Digest, 95, Villach (Austria), Oct. 2004.


[IC38]   A. Abramo, F. Blanchini, L. Geretti, C. Savorgnan,

                 “Mixed convex/non-convex distributed localization algorithm for the deployment of indoor

                 positioning services”,

                 American Control Conference Technical Digest, 3967 (2007).


[IC39]   C. Cavallotti, P. Merlino, E. Susilo, M. Vatteroni, P. Valdastri, A. Abramo, A. Menciassi, P. Dario,

                 “An FPGA-based flexible demo-board  for endoscopic capsule design optimization”,

                 Eurosensors XXIV Technical Digest, 70 (2010).


[IC40]   M. Vatteroni , C. Cavallotti, P. Valdastri, A. Menciassi, P. Dario, P. Merlino, A. Abramo,

                 “Vision system for high frame rate wireless capsule endoscope”,

                 IEEE Sensors 2011 Technical Digest, 809 (2011).


[IC41]  A. Guerrieri, L. Geretti, G. Fortino, A. Abramo,

                “A Service-oriented Gateway for Remote Monitoring of Building Sensor Networks”,

               IEEE CAMAD 2013 Technical Digest, 139 (2013).




Contributions in Collections


[IB01]   A. Abramo, R. Brunetti, C. Fiegna, C. Jacoboni, B. Riccò, E. Sangiorgi, F. Venturi,

                 In “Monte Carlo simulation of silicon devices”,

                 Elsevier Science Publishers B.V., Amsterdam, G. Baccarani Ed., 155 (1993).


[IB02]   C. Jacoboni, A. Abramo, R. Brunetti,

                 “Monte Carlo simulation of hot electrons in semiconductor devices”,

                 In “Hot electrons in semiconductors: physics and devices”,

                 Oxford University Press, N. Balkan Ed., 429 (1998). (Invited paper)


[IB03]   C. Fiegna, A. Abramo, E. Sangiorgi,

                 “Single- and double-gate SOI MOS structures for future ULSI: a simulation study”,

                 In “Future trends in microelectronics”,

                 Wiley, S. Luryi, J. Xu, A. Zaslavsky Eds., 115, (1999).


[IB04]   P. Palestri, L. Selmi, A. Dalla Serra, A. Abramo, E. Sangiorgi, M. Pavesi, P. Rigolli,

                 F. Widdershoven,

                 “Advanced physically based device modeling for gate current and hot carrier phenomena in scaled

                 MOSFETs”.

                 In “Future trends in microelectronics”,

                 Wiley, S. Luryi, J. Xu, A. Zaslavsky Eds., 99, (2002).


[IB05]   A. Abramo,

                 “Modeling electron transport in MOSFET devices: evolution and state of the art”,

                 In “Advanced Device Modeling and Simulation”,

                 Word Scientific Publishing Company, T. Grasser Ed., 1, (2003).


[IB06]   L. Geretti, A. Abramo,

                 “The synthesis of stochastic artificial neural network application using a genetic algorithm approach”,

                 In “Advances in Imaging and Electron Physics”,

                 Academic Press, P.W. Hawkes Ed., 1,  (2011). (Invited paper)


[IB07]   P. Merlino, A. Abramo,

                 “Deformation detection in Structural Health Monitoring”,

                 In “New Developments in Sensing Technology for Structural Health Monitoring - Lecture Notes in
                 Electrical Engineering”,

                 Springer, S.C. Mukhopadhyay Ed., 96, 41  (2011). (Invited paper)


[IB08]   P. Azzoni, L. Geretti, A. Abramo, K. Stefanidis, J. Gialelis, A. Papalambrou, D. Serpanos, K. Rantos,

                 A. Toma, N. Tassadaq, K. Dabcevic, C. Regazzoni, L. Marcenaro, M. Traversone, M. Cesena, S. Mignanti,

                 “Security, privacy, and dependability technologies”,

                 In “Measurable and composable security, privacy and dependability: the SHIELD Methodology”,

                 CRC Press, A. Fiaschetti, J. Noll, P. Azzoni, R. Uribeetxeberria Eds., 29 (2018).


[IB09]   P. Azzoni, K. Rantos, L. Geretti, A. Abramo, S. Gosetti,

                 “Biometric security domain”,

                 In “Measurable and composable security, privacy and dependability: the SHIELD Methodology”,

                 CRC Press, A. Fiaschetti, J. Noll, P. Azzoni, R. Uribeetxeberria Eds., 283 (2018).




Research Reports


[IR01]   A. Abramo, J. Bude, F. Venturi, M.R. Pinto,

                 “Mobility simulation in Si/SiGe heterostructure FETs”,

                 AT&T Technical Memorandum, 11125-941004-22TM (38543), Oct. 4, 1994.




Italian Journals


[IN01]   A. Abramo,
                 “Il miracolo dell'ubiquità”,
                 Rassegna Tecnica del Friuli-Venezia Giulia, 3, 19 (2006).




Workshops


[IW01]   A. Abramo,

                  “Quantum effects and limits in device scaling”

                  Workshop “Challenges in Advanced Electronic Device Simulation”, 

                  Seattle, WA (USA), Sep. 2000. (invited panelist)




Patents


[IP01]   M. Carrer, C. De Alti, D. Rughetti, A. Abramo, S. Adami,

                  “System and method for trusted provisioning and autentication for networked devices in cloud-based iot/

                    m2m platforms”

                  Publication number: US9762392 (B2), Sep. 29, 2016.